Browse Prior Art Database

Thin Film Memory

IP.com Disclosure Number: IPCOM000095471D
Original Publication Date: 1964-Jan-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Stapper, CH: AUTHOR

Abstract

This is a magnetic, flat film memory configuration which provides increased sense line data signal outputs and prevents inter-bit flux interference.

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Thin Film Memory

This is a magnetic, flat film memory configuration which provides increased sense line data signal outputs and prevents inter-bit flux interference.

As shown in A, sheet 2 is a continuous, thin ferromagnetic film which is adapted to have discrete areas, e.g., areas 4, 6 and 8, magnetized to store bits of information. Disposed directly over area 6, for instance, is sense line 10 and bit drive line 12. Orthogonal to bit and sense lines 12 and 10, respectively, is word drive line 14. Overlaying the entire drive and sense line configuration is a continuous ferrite sheet 16. Ground plane 18 supports the entire configuration and provides the ground return for all of the drive and sense conductors.

The coincident energization of bit and word drive lines 12 and 14, respectively, causes a bit of information to be stored in area 6.

Like actions by other bit and word drive lines, not shown, cause similar bits of information to be stored at areas 4 and 8. If magnetic binder 16 was not provided as covering for the entire memory array, the flux pattern for each bit would be as shown in B. Sense line 10 would have few flux lines coupling it. Adjacent bit 8 would be affected by the stray flux lines from bit 6. With magnetic binder 16 overlaying the array as shown in C, flux lines 20 tend to seek the low reluctance path through ferrite binder 16 and do not interfere with adjacent bit 8. Moreover, additional flux lines are coupled around sense line 10 and, when th...