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Location of the Source and Seed with Respect to Electrode Shields Needed in Asymmetric AC Sputtering Process

IP.com Disclosure Number: IPCOM000095501D
Original Publication Date: 1964-Feb-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Haq, KE: AUTHOR [+2]

Abstract

In an asymmetrical AC sputtering process, seed 1 is supported on carriage 3 and normally maintained at -250 volts. Also, source 5 is supported on carriage structure 7 and normally maintained at -3000 volts. Seed 1 and supporting carriage 3 are contained within a conducting shield 9, seed 1 protruding slightly beyond the rim portion. On the other hand, source 5 and supporting carriage 7 are contained within shield 11, source 5 being within or below the rim portion. The system is maintained at an argon partial pressure of approximately 50 microns such that a glow discharge is struck between seed 1 and source 5.

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Location of the Source and Seed with Respect to Electrode Shields Needed in Asymmetric AC Sputtering Process

In an asymmetrical AC sputtering process, seed 1 is supported on carriage 3 and normally maintained at -250 volts. Also, source 5 is supported on carriage structure 7 and normally maintained at -3000 volts. Seed 1 and supporting carriage 3 are contained within a conducting shield 9, seed 1 protruding slightly beyond the rim portion. On the other hand, source 5 and supporting carriage 7 are contained within shield 11, source 5 being within or below the rim portion. The system is maintained at an argon partial pressure of approximately 50 microns such that a glow discharge is struck between seed 1 and source 5.

Extension of the rim of shield 11 beyond the level of source 5 effectively concentrates electrical fields at the source structure such that only source 5 is bombarded by argon ions from the plasma and no impurities are sputtered toward seed 1. On the other hand, protrusion of seed 1 beyond shield 9 to eliminate dead space over it allows efficient flushing within the argon atmosphere to remove outgased impurities, e. g., oxygen, and provides minimal distortion of fields at the seed structure to allow efficient bombardment by argon ions to remove unwanted material from the surface of seed 1.

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