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Coherent Coupling in Multi Junction Injection Lasers

IP.com Disclosure Number: IPCOM000095509D
Original Publication Date: 1964-Feb-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Niebuhr, KE: AUTHOR [+2]

Abstract

The n-p-n GaAs laser structure of A is biased so that laser action occurs in regions -- proximate to both n-p junctions. The p layer is made thin enough so that the active regions are separated by a distance on the order of 10 microns. Thus, this gives rise to coherent coupling between the regions. The output radiation associated with one junction is in phase with that of the other junction.

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Coherent Coupling in Multi Junction Injection Lasers

The n-p-n GaAs laser structure of A is biased so that laser action occurs in regions -- proximate to both n-p junctions. The p layer is made thin enough so that the active regions are separated by a distance on the order of 10 microns. Thus, this gives rise to coherent coupling between the regions. The output radiation associated with one junction is in phase with that of the other junction.

Substantially the same effect is produced by the cylindrical configuration of B. There, instead of two separate active regions, only one cylindrical region, having a diameter on the order of 10 microns, is produced. Similarity of phase exists over all portions of its output.

Some improvement in overall laser efficiency results from these configurations. The same results would obtain in the case of analogous p-n-p structures.

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