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Electrically Bistable Diode with Light Output

IP.com Disclosure Number: IPCOM000095542D
Original Publication Date: 1964-Feb-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Dumke, WP: AUTHOR [+2]

Abstract

In a high resistance junction diode made of a material with a high efficiency for radiative recombination, a bistable electrical characteristic is obtained in which the higher current state is accompanied by the output of light. This light is useful to detect which state the diode is in or to switch similar units into the high current condition.

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Electrically Bistable Diode with Light Output

In a high resistance junction diode made of a material with a high efficiency for radiative recombination, a bistable electrical characteristic is obtained in which the higher current state is accompanied by the output of light. This light is useful to detect which state the diode is in or to switch similar units into the high current condition.

The most essential design requirement is that at least one side of the junction have a high dark series resistance such that initially most of the voltage drop across the diode occurs in this high resistance region and not across the junction itself. For some value of forward bias, however, significant carrier injection occurs and the recombining carriers give off light.

Part of the light so produced is reabsorbed in the high resistivity region of the diode, producing hole electron pairs and thus lowering the diode's series resistance. As a result, more and more current flows through the diode as it switches to a state with both high current and appreciable light output. A material such as GaAs is ideal for fabricating such a device. This is because it has high radiative recombination efficiency, is obtainable in high resistance form and can be fabricated into junctions. The drawings demonstrate respectively the physical configuration of the device and the characteristics of the device.

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