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Controlled Doping of Epitaxial Layers

IP.com Disclosure Number: IPCOM000095588D
Original Publication Date: 1964-Mar-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Cheroff, G: AUTHOR [+2]

Abstract

In a vapor transport process whose desired end result is the epitaxial growth of a material, such as a semiconductor, upon a single crystal substrate, technique s which make possible instantaneous on set and termination of impurity incorporation processes and which offer potential for continuously varying impurity concentrations during the growth process are highly desirable. A method for achieving this end is the use of suitable electromagnetic radiation to decompose vapor phase species containing the impurity atom, when incorporation of the latter into the growing layer is desired. Thus, the process is conducted by maintaining a low vapor phase concentration of the impurity during the growth process until such time as increased concentration of this impurity is desired in the growing layer.

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Controlled Doping of Epitaxial Layers

In a vapor transport process whose desired end result is the epitaxial growth of a material, such as a semiconductor, upon a single crystal substrate, technique s which make possible instantaneous on set and termination of impurity incorporation processes and which offer potential for continuously varying impurity concentrations during the growth process are highly desirable.

A method for achieving this end is the use of suitable electromagnetic radiation to decompose vapor phase species containing the impurity atom, when incorporation of the latter into the growing layer is desired. Thus, the process is conducted by maintaining a low vapor phase concentration of the impurity during the growth process until such time as increased concentration of this impurity is desired in the growing layer.

At this time, suitable electromagnetic radiation, i.e., electromagnetic radiation of proper wavelength and intensity to break the impurity atom vapor phase species bond is impinged on the growing layer and the vapor stream surrounding it. Depending upon the intensity of such radiation, the quantity of incorporated impurity atoms in the growing epitaxial layer can be varied.

A subject system is that involving the transport of germanium by hydrogen iodide in which gallium iodides are present in the vapor stream. The gallium iodides are subjected to the bond breaking process by the selective use of an electromagnetic radiation wavelength ab...