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Magnetic Film Memories

IP.com Disclosure Number: IPCOM000095731D
Original Publication Date: 1964-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Jutzi, W: AUTHOR

Abstract

The system is a word-organized thin magnetic film memory in which inductive disturbance voltages in the sense line are compensated by utilizing a sense line having a centrally disposed tap. The system includes base plate 1 supporting carrier plates 2 on which magnetic film memory cells 3 are disposed. A sense line 4 is divided into a first part 4A and a second part 4B, which extend in opposite directions from common tap 5 connected to load 6, which may be a conventional sense amplifier.

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Magnetic Film Memories

The system is a word-organized thin magnetic film memory in which inductive disturbance voltages in the sense line are compensated by utilizing a sense line having a centrally disposed tap. The system includes base plate 1 supporting carrier plates 2 on which magnetic film memory cells 3 are disposed. A sense line 4 is divided into a first part 4A and a second part 4B, which extend in opposite directions from common tap 5 connected to load 6, which may be a conventional sense amplifier.

The ends of a line 4 are shorted or terminated with impedances 7, which may have a magnitude equal to the characteristic impedance of line 4. A bit line 8 is disposed above and parallel to line 4.

One end of bit line 8 is shorted or terminated in, e.g., its characteristic impedance 9 and the other end is connected to bit line driver 10. Word lines 11 are interposed between the parallel lines 4 and 8 and arranged perpendicular to them. Lines 11 can be coupled to a suitable word line driver.

When a pulse propagates on bit line 8 in a write operation, a noise pulse is induced in line 4. With line 4 divided into two parts 4A and 4B, two voltages having opposite polarities are generated in them which compensate each other at output tap 5. The compensation is fully effective when the duration of the write pulse is considerably longer than the propagation time of the pulse on bit line 8.

An asymmetric arrangement of the memory cells 3 can be utilized provided the f...