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Gallium Arsenide Light Emitting Diode

IP.com Disclosure Number: IPCOM000095754D
Original Publication Date: 1964-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Roy, MM: AUTHOR [+2]

Abstract

An increased output of incoherent light is obtained from a gallium arsenide or similar intermetallic light-emitting diode by these methods.

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Gallium Arsenide Light Emitting Diode

An increased output of incoherent light is obtained from a gallium arsenide or similar intermetallic light-emitting diode by these methods.

Gallium arsenide diode 10 at A is secured to header 11 containing lead 12 extending through it in insulated relation. Diode 10 is positioned at the center of aperture 13 in a dish-shaped ring which serves as a lens support 14 and is secured to header 11 by soldering. A crystal-clear material, such as thermosetting epoxy casting resin, which can be a mixture of 100 parts of #655 and 7 parts by weight of #555 MARAGLASS* having the shape of a hemisphere, is bonded to the *MARAGLASS is a trademark of Marblette Corp. exposed surfaces of diode 10 and to the inner surface of support 14 to form lens 15.

The diameter of lens 15 is preferably about six times the length of the gallium arsenide diode measured parallel to the junction in it. The ratio of the length of diode 10 to its thickness normal to the junction can also be about six. MARAGLASS casting resin can be cured at 160 - 165 degrees F for a period such as 5 - 24 hours without impairing the electrical characteristics of the semiconductor diode.

The sectional and bottom plan views of a typical lens support together with representative dimensions of a practical arrangement are shown at 13.

The index of refraction of MARAGLASS lens 15 is smaller than that of gallium arsenide but is larger than that of air. Lens 15 reduces internal reflection...