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Magnetic Film Memory

IP.com Disclosure Number: IPCOM000095766D
Original Publication Date: 1964-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 59K

Publishing Venue

IBM

Related People

Middelhoek, S: AUTHOR [+2]

Abstract

The system is a magnetic memory with a continuous thin film 10 of ferromagnetic material exhibiting uniaxial anisotropy E of magnetization having individual memory areas 12 defined by the remaining domains formed in the course of incomplete rotational switching processes of magnetization.

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Magnetic Film Memory

The system is a magnetic memory with a continuous thin film 10 of ferromagnetic material exhibiting uniaxial anisotropy E of magnetization having individual memory areas 12 defined by the remaining domains formed in the course of incomplete rotational switching processes of magnetization.

The minimum size of the remaining domains occurring throughout thin films after incomplete, or partial, rotational switching processes of magnetization is a characteristic property of the film and depends upon its thickness, as described more fully in IBM Journal of Research and Development, Vol. 6, No. 4, October 1962, pp. 394 - 406 by S. Middelhoek. No smaller domains can exist. Therefore in film areas smaller than those remaining domains, coherent rotational switching of magnetization again occurs without the disturb coupling effects due to the stray field energy of domain walls.

The system comprises continuous film 10 which can be deposited on conductive substrate 14. The system has a plurality of parallel first strip lines 16 arranged perpendicular to a plurality of parallel second strip lines 18. Each individual memory area or the characteristic remaining domain 12 of film 10 is located beneath one of lines 16 and one of lines 18 at their cross point to form memory cells 20. The width of each line 16 and 18 is of the order of 100 microns and is equal to or less than that of a remaining domain 12. The width of lines 16 need not be equal to that of lines...