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Magnetic Memory

IP.com Disclosure Number: IPCOM000095767D
Original Publication Date: 1964-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 59K

Publishing Venue

IBM

Related People

Schlaeppi, HP: AUTHOR

Abstract

The system is a word-organized thin magnetic film memory in which a reflected word pulse is used to regenerate information or write new information into film storage cells having uniaxial magnetic anisotropy E. The system comprises a memory plane 50 including a plurality of thin magnetic film storage cells 32 arranged in columns and rows. The system is operated according to the orthogonal drive method having word lines 11, 21, 31 and 41 and bit lines 91 .. . 98. Access to the word lines takes place via transistor switches 51...56 arranged in pyramid form. The word lines are addressed by an addressing register 58 via suitably activated control lines 64. . . 67. Readout and write-in of information take place parallel by bit by means of sense amplifiers 79 via sense lines 71...

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Magnetic Memory

The system is a word-organized thin magnetic film memory in which a reflected word pulse is used to regenerate information or write new information into film storage cells having uniaxial magnetic anisotropy E. The system comprises a memory plane 50 including a plurality of thin magnetic film storage cells 32 arranged in columns and rows. The system is operated according to the orthogonal drive method having word lines 11, 21, 31 and 41 and bit lines 91 ..
. 98. Access to the word lines takes place via transistor switches 51...56 arranged in pyramid form. The word lines are addressed by an addressing register 58 via suitably activated control lines 64. . . 67. Readout and write-in of information take place parallel by bit by means of sense amplifiers 79 via sense lines 71... 78 and write amplifiers 99 via the bit lines 91 .. . 98, respectively.

In the read cycle of the system, word pulse 10 generated by word line driver 57 provides a destructive readout operation of information which is available at output terminal 78A of sense amplifiers 79. For information regeneration or for the writing in of new information, reflected word pulse 12 from the grounded or short-circuited end 14 of the chosen word line 11, 21, 31 or 41 is utilized after being suitably delayed by delay device 86. To establish a suitable delay between the readout and write-in operations, the delay device 86 can consist of, e.g., an extended portion of the word line 11, etc., dispose...