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Magnetic Memory

IP.com Disclosure Number: IPCOM000095768D
Original Publication Date: 1964-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 3 page(s) / 58K

Publishing Venue

IBM

Related People

Schlaeppi, HP: AUTHOR

Abstract

The system is a word-organized thin magnetic film memory. In this, one amplifier is used to amplify signals associated with more than one storage cell of a given word. The system has a memory plane 2 including a plurality of thin magnetic film storage cells 33. These have uniaxial magnetic anisotropy E and are arranged in columns and rows. The system is operated according to the orthogonal drive method having word lines 7, 8, 9 and 10 and a common bit line 42 disposed perpendicular to each of the word lines 7 .. . 10 at each of the cells 33, extending in S-shaped form across the memory cells 33 by rows. Each line 7 ... 10 is grounded or terminated through an impedance at one end and connected at the other end to a respective one of a plurality of word drive amplifiers 11. These are coupled to a word address unit 13.

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Magnetic Memory

The system is a word-organized thin magnetic film memory.

In this, one amplifier is used to amplify signals associated with more than one storage cell of a given word. The system has a memory plane 2 including a plurality of thin magnetic film storage cells 33.

These have uniaxial magnetic anisotropy E and are arranged in columns and rows. The system is operated according to the orthogonal drive method having word lines 7, 8, 9 and 10 and a common bit line 42 disposed perpendicular to each of the word lines 7 .. . 10 at each of the cells 33, extending in S-shaped form across the memory cells 33 by rows. Each line 7 ... 10 is grounded or terminated through an impedance at one end and connected at the other end to a respective one of a plurality of word drive amplifiers 11. These are coupled to a word address unit 13. Common sense line 34 runs parallel to S-shaped bit line 42. One end 35 of line 34 is grounded or terminated through an impedance. The other end 36 is connected to sense amplifier 37 having an output terminal 37A, which can be coupled to any suitable utilizing device. End 44 or line 42 located adjacent end 35 of line 34 is connected to write amplifier 45 having an input terminal 45A into which information for storage can be applied. End 43 of line 42 is connected to ground. The allocation of 0 and 1 to the easy direction of cells 33 alternates in a vertical direction along a given word due to the S-shaped arrangement of line 34 and line 42. A delay element 46 is inserted into line 34 and into lines 42 between each of the rows of cells 33. Under the action of a single word drive pulse from one of the amplifiers 11, a sequence of several useful signals from each of the five cells of a word, representing the binary information of a word, can be read out on the sense line via single amplifier 37 and written in on the bit line via the single amplifier 45. This arrangement permits time-sharing of the sense and bit drive circuits.

To effect a readout, a word sense pulse...