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Browse Prior Art Database

Sheet Film Drive Matrix

IP.com Disclosure Number: IPCOM000095786D
Original Publication Date: 1964-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 58K

Publishing Venue

IBM

Related People

Barnard, JD: AUTHOR

Abstract

Cryotron switches related to individual bit positions of a sheet film superconductive memory eliminate the problem of half-select noise at the bit positions.

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Sheet Film Drive Matrix

Cryotron switches related to individual bit positions of a sheet film superconductive memory eliminate the problem of half-select noise at the bit positions.

Storage accessing by half-select currents in two dimensions selects a switch. The selected switch provides a full-select field to the related bit position, without affecting any other bit position.

Information is stored by introducing circulating currents within storage locations of superconductive flux storage plane 12. Drive matrix 14, deposited over plane 12, has a plurality of conductive paths 15 and a plurality of cryotrons
16. Each cryotron 16 is positioned over a storage location in plane 12. Cryotrons 16 are maintained resistive by bias current Ib flowing through bias winding 34. Information can be stored within a particular storage location by initially passing current Ia through one Y address line 18, 20, 22 or 24 and through one X address line 26, 28, 30 or 32. The lines selected are those which intersect over the particular storage location in plane 12.

The effect of current Ia at the point of intersection is sufficient to overcome the effect of current Ib in winding 34 and thus drive the cryotron 16' at the point of intersection superconductive. All the other cryotrons stay resistive. The field from current Ia, which can be maintained small because the cryotrons have gain, is not able to permeate plane 12 and create noise there. Drive current Id, now impressed on drive ma...