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Molybdenum Oxide Negative Resistance Devices

IP.com Disclosure Number: IPCOM000095830D
Original Publication Date: 1964-Aug-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Pettus, C: AUTHOR [+2]

Abstract

These molybdenum oxide devices have negative resistance characteristics and different contact arrangements. The point contact device in A is fabricated from a preparation consisting of 0.2 grams of MoO2 and 5.0 grams of MoO(3). The device in B is made from a preparation consisting of 1.0 grams of MoO(2) and 5.0 grams of MoO(3).

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Molybdenum Oxide Negative Resistance Devices

These molybdenum oxide devices have negative resistance characteristics and different contact arrangements. The point contact device in A is fabricated from a preparation consisting of 0.2 grams of MoO2 and 5.0 grams of MoO(3). The device in B is made from a preparation consisting of 1.0 grams of MoO(2) and 5.0 grams of MoO(3).

Devices having broad area contacts are fabricated by the following process. MoO(3) powder is melted in a crucible and allowed to solidify to form an ingot. MoO(2) powder, compressed into a pellet, is placed on the ingot. The latter is slowly melted until the melt wets the MoO(2) pellet, resulting in the formation of a boundary layer between MoO(2) and MoO(3). Broad area contacts are formed, as in C, by applying silver paint to a thickness of approximately 1/8th of an inch. Point contacts on a similar device can also be fabricated to yield satisfactory results.

Other devices, as in D, are made of various proportions of MoO(2) and MoO(3). While in the melt stage, a pair of wires, each 10 mils thick, is inserted into the melt to a depth of approximately 5 mm and maintained in position while the melt cools and crystallizes, with current flowing through the wires.

In these devices, temperature variations exist in the regions where the negative resistance characteristic is exhibited.

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