Browse Prior Art Database

Multi Stable Thin Film Storage Element

IP.com Disclosure Number: IPCOM000095908D
Original Publication Date: 1964-Sep-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Ahn, KY: AUTHOR [+2]

Abstract

This is (1) a method of making multi-stable thin film storage elements and (2) a method of using such elements in computer memory. 1. Method of Fabrication.

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Multi Stable Thin Film Storage Element

This is (1) a method of making multi-stable thin film storage elements and (2) a method of using such elements in computer memory. 1. Method of Fabrication.

The multi-stable magnetic storage film in drawing A is made by vacuum evaporation of two magnetic film layers and a metallic layer.

It exhibits four stable states as shown in drawing B. The magnetic properties of the lower and the top magnetic layers can be controlled by proper choice of the substrate temperature and the conducting layer thickness, e.g., A1. Similar 13-H loops are obtained with conducting layers of Au, Ag, and Cu. 2. Drive Pulses for Various States.

In order to utilize this storage element in a computer memory, the train of pulses shown in drawing C is necessary to select one of the four stable states.

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