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Browse Prior Art Database

Zone Melting of GaAs

IP.com Disclosure Number: IPCOM000095926D
Original Publication Date: 1964-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 29K

Publishing Venue

IBM

Related People

Kampschulte, G: AUTHOR

Abstract

Zone melting of GaAs crystals is normally performed in closed systems under vacuum. The crystal to be remelted and the seed are mounted in a quartz tube. This is then placed into a second tube serving as a vacuum container. However, this process is very complicated and fogging of the inner tube impedes the observation.

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Zone Melting of GaAs

Zone melting of GaAs crystals is normally performed in closed systems under vacuum. The crystal to be remelted and the seed are mounted in a quartz tube. This is then placed into a second tube serving as a vacuum container. However, this process is very complicated and fogging of the inner tube impedes the observation.

The disadvantages are largely avoided by the following method. Tube 11 has an indentation 9 preventing the quartz ring 2 inserted afterward from sliding down. Seed 1, the bottom end of which is shaped conical, is inserted into ring 2. Both are then slid into tube 11 until ring 2 abuts indentation 9. Next, tube 1 1 has, at a location dependent on the length of the semiconductor bar 5 to be processed, a second indentation 10. Bar 5 is inserted into quartz ring 8. Both are then slid into tube 11 until bar 5 abuts seed 1 and until ring 8 abuts indentation 10, respectively. Subsequently, tube 11 is evacuated, filled with a protective gas if necessary, and sealed hermetically. Then, seed 1 and bar 5 are fixed in position by melting regions 3 and 6 and centered by melting regions 4 and 7.

Then, the seed and bar are connected by melting region 12, and the zone melting operation is carried through.

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