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Browse Prior Art Database

Magnetic Thin Film Storage Device Substrate

IP.com Disclosure Number: IPCOM000095951D
Original Publication Date: 1964-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 3 page(s) / 45K

Publishing Venue

IBM

Related People

Schmeckenbecher, AF: AUTHOR

Abstract

Magnetic thin film storage devices include a substrate over which the storage medium, the magnetic thin film, is placed. In many instances it is desirable to employ a metal plate as the substrate for this offers a return path for the drive lines and utilizes the image currents, which are of assistance in the switching of the magnetization.

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Magnetic Thin Film Storage Device Substrate

Magnetic thin film storage devices include a substrate over which the storage medium, the magnetic thin film, is placed. In many instances it is desirable to employ a metal plate as the substrate for this offers a return path for the drive lines and utilizes the image currents, which are of assistance in the switching of the magnetization.

The magnetic thin film storage device 10 shown in A includes metallic substrate 2 over which is superimposed the magnetic thin film 6 which has uniaxial anisotropy. It has an easy axis of magnetization, shown by arrow 100, and a hard axis of magnetization, shown by arrow 200. One drive line for switching the magnetic remanence word line W1 is placed parallel to the easy axis magnetization, arrow 100. The other drive line, bit line BS1 is positioned transverse to the word line W1, or in other words, in alignment with the hard axis of magnetization, arrow 200.

A pulse program for operation of device 10 is shown in B. Storage of binary intelligence requires activation of both drive lines W1 and BS1. In operation, the word pulse is always of the same polarity, while the bit pulse can assume either a positive or negative polarity. The polarity of that pulse determines the type of intelligence stored along the easy axis of magnetization. There is a time lag between the application of the bit pulse and word pulse and the bit pulse continues for a short period after the cessation of the word pulse.

Reading of intelligence is effected with application of the word pulse. Sensing is realized on the leading edge of the word pulse while that waveform is rising. In device 10, BS1 serves as the sense line as well as the bit line. The polarity of the waveforms induced by activation of W1 during the rise time of the leading edge of the word pulse, determines the binary intelligence stored. This is brought out by drawing B.

A discernible signal is r...