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Laminated Glass Coating on Semiconductor Devices

IP.com Disclosure Number: IPCOM000095964D
Original Publication Date: 1964-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Beliveau, AJ: AUTHOR [+2]

Abstract

A thin glass coating over a silicon dioxide layer is employed as a support for aluminum or other metal electrodes and as a hermetic seal for a semiconductor device. Under operating biases and temperatures, ions are introduced into the oxide from either the glass or the electrodes or both. These ions may in turn create in the surfaces of the semiconductor material about the PN junctions of the devices undesirable inversion layers which may impair one or more electrical parameters of the devices.

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Laminated Glass Coating on Semiconductor Devices

A thin glass coating over a silicon dioxide layer is employed as a support for aluminum or other metal electrodes and as a hermetic seal for a semiconductor device. Under operating biases and temperatures, ions are introduced into the oxide from either the glass or the electrodes or both. These ions may in turn create in the surfaces of the semiconductor material about the PN junctions of the devices undesirable inversion layers which may impair one or more electrical parameters of the devices.

The migration of the ions is prevented by (1) oxidizing the surface of the semiconductor device in the usual way, (2) applying over the oxide layer a thin layer of a high purity glass which has a high activation energy level, (3) applying aluminum or other electrodes as by evaporation to exposed terminal regions of the semiconductor material and over predetermined portions of the glass, and (4) applying a layer of hermetic sealing glass over the entire structure.

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