Browse Prior Art Database

Three Terminal Tunneling Device Utilizing Heterojunction

IP.com Disclosure Number: IPCOM000095965D
Original Publication Date: 1964-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Esaki, L: AUTHOR

Abstract

Drawing 1 shows the device consists of both p/+/ type Ge and n type Ge deposited on a substrate n type GaAs. Ohmic contacts are made to each region.

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Three Terminal Tunneling Device Utilizing Heterojunction

Drawing 1 shows the device consists of both p/+/ type Ge and n type Ge deposited on a substrate n type GaAs. Ohmic contacts are made to each region.

Drawing 2 indicates an energy diagram of the A-A' cross-section which is an n-n step heterojunction. Drawing 3 illustrates an energy diagram of B-B' cross- section very close to the physical interface of the heterojunction and inside the accumulation layer. This is the usual tunnel diode situation.

Both drawings 2 and 3 show the cases at no applied voltage. If a reverse voltage is applied to n type GaAs, a number of accumulated electrons in the Ge side can be increased, particularly in the n-type Ge side and not appreciably in the heavily doped p-type Ge side. This results in increasing the tunneling current by narrowing the tunneling path shown in drawing 3.

Drawing 4 shows the 1-V characteristics of Ge p-n tunnel junctions between electrodes 10 and 20 as a parameter of applied voltage V(3), i.e., reverse bias, between electrodes 10 and 30, which indicate a three terminal tunneling device, namely, a tunnel diode which has a control electrode.

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