Browse Prior Art Database

El GaAs Oscillator

IP.com Disclosure Number: IPCOM000095969D
Original Publication Date: 1964-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Brayton, R: AUTHOR [+3]

Abstract

Gallium Arsenide (GaAs) diodes, properly diffused with zinc and manganese, exhibit light emitting and light responsive characteristics as well as the negative resistance characteristic. Such diodes emit light at point 1 on their characteristic curves. When biased at point 2, the operating point can be shifted to point 1 by either exposing the diode to light or by increasing the current through the diode.

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El GaAs Oscillator

Gallium Arsenide (GaAs) diodes, properly diffused with zinc and manganese, exhibit light emitting and light responsive characteristics as well as the negative resistance characteristic. Such diodes emit light at point 1 on their characteristic curves. When biased at point 2, the operating point can be shifted to point 1 by either exposing the diode to light or by increasing the current through the diode.

El GaAs diodes 3 and 4 are connected to operate as a free-running multivibrator or oscillator. Diodes 3 and 4 are biased with a load line that intersects their respective current-voltage characteristic IV curves at only one stable point such as point 2. A light pulse directed on either diode results in the emission of a light pulse from the exposed diode which is directed to impinge on the unexposed diode. The. light energy switches the latter diode into its light emitting state which initiates the alternate excitation and extinction of the diodes resulting in a free-running oscillation.

The output may be either electrical by monitoring the voltage across the biasing resistors R1 and R2 or optical by sampling the light emitted from the diodes. The circuit has less components than similar circuits which use electro- optical devices such as photocells and photoemitters.

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