Browse Prior Art Database

Deposition Method for Aluminum Oxide Films

IP.com Disclosure Number: IPCOM000095972D
Original Publication Date: 1964-Oct-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 50K

Publishing Venue

IBM

Related People

Kaplan, LH: AUTHOR [+2]

Abstract

This apparatus is for depositing thin oxide films by a vapor phase reaction method which introduces minimum contamination into the vacuum system.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 96% of the total text.

Page 1 of 2

Deposition Method for Aluminum Oxide Films

This apparatus is for depositing thin oxide films by a vapor phase reaction method which introduces minimum contamination into the vacuum system.

The apparatus has a vacuum chamber defined by wall A having an aperture for receiving demountable flange B. Reactant input tube C, connected to valved vessel D containing reactant gas, passes through flange B and terminates in perforated ring E. Substrate holder F is fixedly mounted on input tube C and supports substrate G in a plane parallel with that of perforated ring E. Cold-trap cylinder H is located about ring E and substrate G and is cooled by liquid refrigerant supplied along tubes I which is sufficient to condense the reactant gas. Tubes I define cooling coil J which supports cylinder H with respect to perforated ring E and substrate G.

While evaporant material, indicated by the arrows K, is directed onto substrate G, reactant gas is injected into the evaporated stream via perforated ring E at a rate sufficient to react evaporant material K. The product of the vapor phase reaction forms as a thin film on the surface of substrate G. For example, a thin aluminum oxide film is formed on substrate G by reacting aluminum evaporant with oxygen or water vapor supplied along reactant input tube C. Excess reactant vapor condenses on the surface of cylinder H thus allowing the bulk of the vacuum chamber to be maintained at a low pressure during the deposition process.

1

Page 2 o...