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Thin Film Voltage Source

IP.com Disclosure Number: IPCOM000095988D
Original Publication Date: 1964-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 21K

Publishing Venue

IBM

Related People

Gregor, LV: AUTHOR

Abstract

This thin-film battery is suitable as a microminiature component, e. g., to supply biasing potentials to field effect transistors, not shown, formed on substrate 1.

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Thin Film Voltage Source

This thin-film battery is suitable as a microminiature component, e. g., to supply biasing potentials to field effect transistors, not shown, formed on substrate 1.

The thin-film battery comprises alternating films of silver Ag, silver oxide Ag(2)O, and copper Cu. Initially, silver layer 3 is vapor deposited onto substrate 1 to form the battery cathode. Oxygen is then introduced into the system to oxidize layer 3 and form silver oxide layer 5 which serves as the electrolyte. Finally, copper layer 7 is vapor deposited over the electrolyte layer 5 to form the battery anode. The half-cell reactions are: Ag(2)O + H(2)O + 2e = 2Ag + 2OH/-/ (0.344v) 2Cu + 2OH/-/ = Cu(2)O + H(2)O + 2e (0. 358v). The thermodynamic reaction of the thin-film battery is: 2Cu + Ag(2)O = Cu(2) + 2Ag (0.702v).

Higher potentials can be obtained by connecting a number of thin-film batteries in series.

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