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Browse Prior Art Database

Tester for Semiconductor Devices

IP.com Disclosure Number: IPCOM000095996D
Original Publication Date: 1964-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 43K

Publishing Venue

IBM

Related People

Croisier, A: AUTHOR [+3]

Abstract

Testing the electrical parameters of fragile miniature semiconductor devices such as tunnel diodes requires the use of delicate, reliable equipment which does not damage the devices. Some tunnel diode substrates, e. g., are 4 mils thick, have lengths and widths of 25 mils and ball terminals which are 5 mils in diameter and at 15 mil spacings. Heretofore, lateral components of forces exerted by probes of the test equipment making engagement with these ball, terminals, which often extend different distances above the substrate, unavoidably sheared off one or more balls and ruined the device. Also, damping networks in the equipment connected to the probes to attenuate spurious signal components were too remote from the probes so that accurate measurements were not obtained.

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Tester for Semiconductor Devices

Testing the electrical parameters of fragile miniature semiconductor devices such as tunnel diodes requires the use of delicate, reliable equipment which does not damage the devices. Some tunnel diode substrates, e. g., are 4 mils thick, have lengths and widths of 25 mils and ball terminals which are 5 mils in diameter and at 15 mil spacings. Heretofore, lateral components of forces exerted by probes of the test equipment making engagement with these ball, terminals, which often extend different distances above the substrate, unavoidably sheared off one or more balls and ruined the device. Also, damping networks in the equipment connected to the probes to attenuate spurious signal components were too remote from the probes so that accurate measurements were not obtained.

Tester 10 shown diagrammatically in A with its probe 11, an enlarged view of which is shown in B, overcomes the difficulties mentioned. High-speed tunnel diodes under test require that the damping network be located within 50 mils of the probe contact. This is accomplished by incorporating the network in probe 11. The network comprises resistor 12 and capacitor 13 sandwiched between and electrically interconnecting the two halves 15 and 16 of probe 11. An epoxy layer 17 cements the two halves together in insulated relation.

To assure that probe 11 exerts uniform contact pressure on ball terminals 18 and 19 of diode 20, despite unequal terminal heights, probe 11 is...