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Coupled Film Memory

IP.com Disclosure Number: IPCOM000096020D
Original Publication Date: 1964-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 52K

Publishing Venue

IBM

Related People

Louis, HP: AUTHOR

Abstract

A coupled film memory having low attenuation strip lines is realized by disposing within the magnetic field of each strip line a dummy magnetic film.

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Coupled Film Memory

A coupled film memory having low attenuation strip lines is realized by disposing within the magnetic field of each strip line a dummy magnetic film.

The attenuation factor is a = R/2Zo, where R is the DC resistance and Zo is the characteristic impedance of a line. By increasing Zo such that only the inductance of the line is increased, the attenuation alpha is decreased.

In drawing A, a coupled film memory has storage film 10 which is a coupled magnetic film surrounding strip line 12 used as a bit line. Storage film 10 has an easy axis perpendicular to the length of bit line 12. Dummy magnetic film 14 in the form of a continuous sheet having an easy axis parallel to the length of bit line 12 is interposed between coupled film 10 and conductive substrate 16 within magnetic field M produced by current passing through bit line 12. Film 14 provides the increased inductance which reduces the attenuation alpha of bit line
12.

In drawing B, there is shown a coupled film memory similar to that of drawing A but with a dummy magnetic film 20 having the form of an elongated strip disposed parallel to bit line 12. In drawing C, the coupled film memory has a dummy magnetic film 22 in the form of a coupled film disposed between storage film 10 and bit line 12. In drawing D, dummy magnetic films 24 and 26 have a first layer interposed between storage film 10 and substrate 16 and a second layer 26 located above word line 18. Dummy magnetic films 14, 20, 22 a...