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Thin Film Memory Element Demagnetization Reduction Method

IP.com Disclosure Number: IPCOM000096024D
Original Publication Date: 1964-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 24K

Publishing Venue

IBM

Related People

Penoyer, RF: AUTHOR

Abstract

The demagnetizing field set up at the edges of a magnetic thin film memory element can be reduced from the demagnetizing field H(D) set up in a film element having a square or rectangular area in the plane of the element. Such reduction is obtained by designing the elements with tapered edges in the film plane.

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Thin Film Memory Element Demagnetization Reduction Method

The demagnetizing field set up at the edges of a magnetic thin film memory element can be reduced from the demagnetizing field H(D) set up in a film element having a square or rectangular area in the plane of the element. Such reduction is obtained by designing the elements with tapered edges in the film plane.

The local demagnetizing field at the edge of trapezoidal film element 10 is H'D = HD sin B. Due to the taper, component H'Dx which actually opposes the magnetization M is but a fraction of the value HD, since H'Dx = H'D sin Omega = HD sin2 Omega. Demagnetizing field H'Dx can be reduced to a small fraction of field HD by making the taper angle B small. The foregoing is, of course, affected by the anisotropy and exchange energy.

Geometries other than that of trapezoidal film element 10 which reduce the demagnetizing field are, e. g., parallel-piped film element 12, single spike edge element 14 and multiple spike edge element 16.

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