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Three Dimensional Magnetic Film Memory

IP.com Disclosure Number: IPCOM000096025D
Original Publication Date: 1964-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 3 page(s) / 60K

Publishing Venue

IBM

Related People

Chang, H: AUTHOR [+2]

Abstract

A three-dimensional magnetic film memory is realized by utilizing shape anisotropy in storage film cells.

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Three Dimensional Magnetic Film Memory

A three-dimensional magnetic film memory is realized by utilizing shape anisotropy in storage film cells.

The memory has a plurality of planes, indicated in drawing A, as Planes I, II, and III. Each has a plurality of storage cells 10 formed on substrate 12 which preferably is made of an electrically conductive material and used as a ground plane. Located on substrate 12 is a plurality of pairs of strips 14 and 16 of magnetic material having a width W and an easy axis perpendicular to their length. Interposed between, as in drawing B which is a cross-sectional view taken through line B-B of drawing A, and disposed parallel to each pair of strips 14 and 16 is an electrically conductive strip line X used as a bit line. Overlaying the pairs of strips 14 and 16 is a plurality of pairs of coplanar electrically conductive strip lines Y and Z arranged perpendicular to the bit lines X. Each pair of strip lines Y and Z forms a word line. Each of the Y and Z lines has a width equal a approximately W/2, as indicated in drawing C.

Each storage cell 10 includes a portion of one pair of the magnetic strips 14 and 16 and is defined by the intersection of one pair of the strip lines Y and Z with one of the bit lines X. Each Y line of each plane I, II, and III is connected in a serial arrangement with a Y line of the other two planes. Each Z line of a given plane is serially connected in a zigzag arrangement with the other Z lines of the given plane Each X line is directly connected to an X drive and sensing device
18. Current pulses from Y driver 20 are selectively passed through the Y lines. Current pulses from Z driver 22 are selectively passed through the Z lines. Bipolar current pulses from the X drive and device 18 are selectively passed through the X lines to drive cells 10.

In operation, the direction of magnetization in a cell 10 can be...