Browse Prior Art Database

Redundant Triple Crossover Pattern

IP.com Disclosure Number: IPCOM000096053D
Original Publication Date: 1964-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Baron, D: AUTHOR

Abstract

This multiple crossover pattern effects interconnections on an integrated system wafer.

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Redundant Triple Crossover Pattern

This multiple crossover pattern effects interconnections on an integrated system wafer.

Crossunder 1 is defined by a diffused area of first conductivity type in the shape of a cross formed on semiconductor wafer 3 of opposite conductivity type. A first insulating layer, not shown, and a first metallic crossover 5 are formed over crossunder 1. A second insulating layer, not shown, and metallic crossover 7 are then formed over crossover 5. Additional metallic crossovers can be formed in insulated fashion as desired.

Prior to the deposition of each metallic crossover, holes are etched through the previously-formed insulating layer to form windows to contact areas 9 on crossunder 1 and on each previously-formed metallic crossovers. Successive metallization processes forming the metallic crossovers thus form metallic contacts to contact areas 9 which extend through all insulating layers.

In the event that any two of crossunder 1 or crossovers 5 and 7 are shorted, the final pattern is effective to provide a single crossover connection on wafer 3.

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