Browse Prior Art Database

Semiconductor Contacts

IP.com Disclosure Number: IPCOM000096054D
Original Publication Date: 1964-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Brodsky, MD: AUTHOR

Abstract

In the manufacture of semiconductor devices, the attachment of lead wires presents a problem. A way to overcome this involves (1) depositing a layer of aluminum on selected exposed portions of a semiconductor device by known techniques such as evaporation, (2) depositing a layer of magnesium over the aluminum layer, (3) alloying the two layers with a portion of the semiconductor device, and (4) thermocompression bonding a gold lead wire to the magnesium layer.

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Semiconductor Contacts

In the manufacture of semiconductor devices, the attachment of lead wires presents a problem. A way to overcome this involves (1) depositing a layer of aluminum on selected exposed portions of a semiconductor device by known techniques such as evaporation, (2) depositing a layer of magnesium over the aluminum layer, (3) alloying the two layers with a portion of the semiconductor device, and (4) thermocompression bonding a gold lead wire to the magnesium layer.

In the absence of the overlayer of magnesium mentioned, a gold lead wire bonded directly to the aluminum layer presents difficulties during operation of the semiconductor device. Heat and electrical bias conditions cause the gold and aluminum to form a brittle gold-aluminum intermetallic compound. This often causes the gold wire to disengage from the aluminum layer. The use of the magnesium overlayer obviates this difficulty.

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