Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

Procedure for Fabrication of GaAs Lasers of Fabry Perot Type with Controlled Frequency of the Peak Emission

IP.com Disclosure Number: IPCOM000096059D
Original Publication Date: 1964-Nov-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Pilkuhn, M: AUTHOR [+2]

Abstract

The peak of the stimulated emission of GaAs lasers of Fabry-Perot structure can vary within certain limits. One reason for this variation is the modification of the band structure with changing impurity concentration.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

Procedure for Fabrication of GaAs Lasers of Fabry Perot Type with Controlled Frequency of the Peak Emission

The peak of the stimulated emission of GaAs lasers of Fabry-Perot structure can vary within certain limits. One reason for this variation is the modification of the band structure with changing impurity concentration.

For a given impurity concentration of the substrate, the frequency of the peak emission depends on the length of the diode. As shown in the graph, this variation is up to 100 angstroms at 77 degrees K and a substrate doping of 1. 5 x 10/18/ Te/cc, if the length is varied from 2 mils to 30 mils. This corresponds to the practical case of optimum doping. This effect of the length dependence can be used to fabricate lasers of a certain fixed peak frequency and still have the opportunity to choose a substrate doping level with the most favorable properties for lasing action.

1

Page 2 of 2

2

[This page contains 2 pictures or other non-text objects]