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Method for Forming Improved Screened Capacitors

IP.com Disclosure Number: IPCOM000096129D
Original Publication Date: 1964-Dec-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Stevens, RG: AUTHOR

Abstract

With standard methods of silk screening dielectric materials onto a capacitor electrode, the dielectric material must be built up in layers as pinholes found in a single layer usually result in shorts between the capacitor plates.

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Method for Forming Improved Screened Capacitors

With standard methods of silk screening dielectric materials onto a capacitor electrode, the dielectric material must be built up in layers as pinholes found in a single layer usually result in shorts between the capacitor plates.

Such a pinholing effect can be substantially reduced. A layer of dielectric paste is screened onto the electrode after which the combination is cooled, as by refrigeration to reduce the drying rate. Drying of the dielectric paste over a longer period of time at a slow rate allows the dielectric particles to disperse evenly over a substrate, thus reducing the occurrence of pinholes.

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