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Semiconductor Wafer Feeding Device for Use in an Arrangement for Effecting Epitaxial Growth

IP.com Disclosure Number: IPCOM000096130D
Original Publication Date: 1964-Dec-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Kuhlmey, H: AUTHOR [+2]

Abstract

In effecting the epitaxial growth of semiconductor films, there are preparatory steps, such as cleansing the reaction tube for removing any residual air, establishing the required temperatures, adjusting the required now rates of the transport gases, etc. These steps require more time and effort than the epitaxial growth. Therefore, the necessity of opening the apparatus for the purpose of removing a small number of coated seeds and introducing uncoated seeds is a disadvantage. This apparatus permits the consecutive coating of a great number of seeds without having to open the device.

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Semiconductor Wafer Feeding Device for Use in an Arrangement for Effecting Epitaxial Growth

In effecting the epitaxial growth of semiconductor films, there are preparatory steps, such as cleansing the reaction tube for removing any residual air, establishing the required temperatures, adjusting the required now rates of the transport gases, etc. These steps require more time and effort than the epitaxial growth. Therefore, the necessity of opening the apparatus for the purpose of removing a small number of coated seeds and introducing uncoated seeds is a disadvantage. This apparatus permits the consecutive coating of a great number of seeds without having to open the device.

Reaction tube 1 communicates via conduits 5 and 6 with tubes 2 and 3 through which H(2) and an H(2)-HCl mixture flow, respectively. Tube 2 contains As as source material which is carried by the H(2) flow via conduit 6 to reaction tube 1. Tube 3 contains Ga as source material which reacts with HCl to form GaCl and is transported by the H(2) via conduit 5 into tube 1. The As temperature is approximately 420 degrees C and the Ga temperature 500 degrees C to 700 degrees C. Seeds 7 consisting of GaAs single crystals are supported on seed holder 8 and are coated with an epitaxial GaAs film at a temperature of 800 degrees C to 825 degrees C.

Holder 8 projects outwardly through sealing sleeve 9 and is movable in the direction of its longitudinal axis and turns about the latter. Turnable and movable i...