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Browse Prior Art Database

Electrical Contact Formation

IP.com Disclosure Number: IPCOM000096138D
Original Publication Date: 1963-Jan-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Gunther-Mohr, GR: AUTHOR [+2]

Abstract

This process produces electrical contacts for wider band gap materials such as the oxides and sulfides of some metals.

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Electrical Contact Formation

This process produces electrical contacts for wider band gap materials such as the oxides and sulfides of some metals.

A specimen wafer 1, composed of a reducible compound, is disposed in reaction container 2. Argon gas from source Ar is fed into the container so as to displace the air. Hydrogen gas is added from source H(2). The surface of wafer 1 is then reduced due to the exposure to the hydrogen.

A thin layer 6 is formed on the surface of wafer 1 due to the reduction, thus forming the conductive element of the compound. Undesired portions of the layer are partly abraded or etched away to leave only ohmic contacts 6A and 6B to which electrical leads are attached.

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