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Extremely Thin Epitaxial Germanium Layers on Gallium Arsenide

IP.com Disclosure Number: IPCOM000096185D
Original Publication Date: 1963-Jan-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Marinace, JC: AUTHOR

Abstract

This process is for epitaxial deposition of thin layers by an open-tube process, involving the disproportionation reaction of a germanium source material with a halogen, and with hydrogen as the carrier gas.

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Extremely Thin Epitaxial Germanium Layers on Gallium Arsenide

This process is for epitaxial deposition of thin layers by an open-tube process, involving the disproportionation reaction of a germanium source material with a halogen, and with hydrogen as the carrier gas.

The various factors controlling growth and growth rate are very critical, particularly in the cases of the reaction of Br2 and C12 with Ge. In fact, conditions can be so adjusted that Ge deposits only upon the GaXs substrate, but not upon nearby Ge substrates. As soon as the GaAs substrate becomes covered with Ge, deposition ceases there also. Hence, this is a self-limiting process, not requiring continuous control.

The particular conditions under which this self-limiting process is effected are as follows: tube diameter = 15 mm; H2 carrier gas flow rate = 1.5 ft/3//hr; carrier gas saturated with GeCl4 at 22 degrees C; Ge source region temperature = 500 degrees C; substrate region temperature = 266 degrees C

Even after seven hours, there is no perceptible Ge deposit on the Ge substrates and the surface of the GaAs substrate only has a Ge appearance. The thickness of this layer is too slight to be measured either by angle-lapping and staining or by infra-red reflection.

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