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Process for Low Temperature Sintering of CdSe Photoconductors

IP.com Disclosure Number: IPCOM000096187D
Original Publication Date: 1963-Jan-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Berkenblit, M: AUTHOR [+3]

Abstract

In the preparation of CdSe sintered layer photoconductors in a fluxed sintering cycle it is desirous of effecting sintering at as low a temperature as possible. This is because: 1. The type of substrates that may be employed increases. 2. Contamination of the sintering layers is minimized. 3. Sintering times become greater making time variations during a fabrication process less significant. 4. Vacancy concentrations become lower and less vacancy backfilling is required to compensate the material. 5. The sintering processing is greatly simplified since composition changes due to volatilization are minimized.

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Process for Low Temperature Sintering of CdSe Photoconductors

In the preparation of CdSe sintered layer photoconductors in a fluxed sintering cycle it is desirous of effecting sintering at as low a temperature as possible. This is because: 1. The type of substrates that may be employed increases. 2. Contamination of the sintering layers is minimized. 3. Sintering times become greater making time variations during a fabrication process less significant. 4. Vacancy concentrations become lower and less vacancy backfilling is required to compensate the material. 5. The sintering processing is greatly simplified since composition changes due to volatilization are minimized.

The process defines a mixed flux composition which permits the fabrication of sintered layers at 335 degrees to 375 degrees. Studies of the system Cdl(2) - CdCl(2) show the existence of an eutectic composition at 70 mole % Cdl(2) and a temperature of 350 degrees. When this eutectic composition is admixed with CdSe in the composition range 15-30 weight % of the Cdl(2) - CdCl(2) eutectic composition to 85-70 weight % respectively of CdSe, a sintering mixture is obtained which shows the appearance of a liquid phase at 335 degrees. Sintered layers of CdSe may be prepared from (CdCl(2) - Cdl(2)) eutectic - CdSe mixtures by sintering screened patterns of these mixtures in either air or oxygen nitrogen mixtures, 0.1% O(2) - 20% O(2), the remainder nitrogen for 15 to 60 minutes at 332 degrees to 375 degree...