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Multi-Terminal, Multi-Functional Chargistors

IP.com Disclosure Number: IPCOM000096239D
Original Publication Date: 1963-Feb-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 3 page(s) / 35K

Publishing Venue

IBM

Related People

Yu, HN: AUTHOR

Abstract

A variety of chargistor devices for performing various functions are obtained by using distinctly shaped semiconductor material with variously placed contacts. When a particular semiconductor geometry is selected, one or more P-type and N-type contacts are used for injection purposes. That is, there can be one or more chargers as well as feeders. Similarly, one or more contacts of either type are used as gates for control purposes. Ohmic contacts are used on resistive components as in the case of a thin diffused resistive layer of either P or N type.

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Multi-Terminal, Multi-Functional Chargistors

A variety of chargistor devices for performing various functions are obtained by using distinctly shaped semiconductor material with variously placed contacts. When a particular semiconductor geometry is selected, one or more P-type and N-type contacts are used for injection purposes. That is, there can be one or more chargers as well as feeders. Similarly, one or more contacts of either type are used as gates for control purposes. Ohmic contacts are used on resistive components as in the case of a thin diffused resistive layer of either P or N type.

In operation, the devices function in accordance with conventional chargistor theory, that is, the chargers, feeders, gates and the semiconductor material perform functions similar to their counterparts in the basic chargistor. The gates are designated G, the feeders are designated F and the chargers are designated
C.

Referring to 1, a chargistor operable as a complementary triode includes two gates G1 and G2, a charger C and a feeder F connected to a slab of semiconductor material.

In 2, a dual pentode includes a slab of semiconductor material having a feeder F connected to the center with chargers C1 and C2 connected at each end. A first group of three gates G1, G2 and G3 is connected between feeder F and charger C1 and a second group of three gates G4, G5 and G6 is connected between feeder F and charger C2. The device of 2 can be operated as a dual triode, tetrode or pentode by using particular ones of the gates.

A chargistor which operates as a dual tetrode is shown in 3. The semiconductor material is arranged in Y configuration with a charger C1 and C2 connected at the end of each fork. A feeder F and gate G1 are connected to the base of the structure. A second gate G2 is connected to the structure b...