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GaAs Germanium Hetero Epitaxial Growth

IP.com Disclosure Number: IPCOM000096311D
Original Publication Date: 1963-Mar-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 35K

Publishing Venue

IBM

Related People

Lyons, VJ: AUTHOR

Abstract

These processes obtain GaAs-Ge heterojunctions by melt growth techniques.

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GaAs Germanium Hetero Epitaxial Growth

These processes obtain GaAs-Ge heterojunctions by melt growth techniques.

In drawing 1, the arrangement is for depositing GaAs on Ge by crystallization from a melt which is in contact with both the GaAs and the Ge wafers. With the heat source shown, the GaAs wafer is maintained at a higher temperature than the Ge wafer. The GaAs wafer serves as a source of GaAs, since some GaAs is dissolved in the liquid Ga. Since the solubility of GaAs in liquid Ga increases with increasing temperature, the solubility at the Ga-GaAs interface is greater than at the Ga-Ge interface. Thus, GaAs is precipitated on the Ge surface. Under the proper temperature conditions and temperature gradient, the GaAs deposits epitaxially on the Ge substrate thus producing a heterojunction. The temperature gradient between the Ge substrate and GaAs source controls the net flow of GaAs to the substrate.

An n-p-n structure, which is fabricated using the technique just described, is shown in drawing 2. The structure is formed in the following manner. A slight temperature decrease from the initial operating temperature causes Ga-doped Ge to be epitaxially deposited from the melt on an n-type Ge substrate. The deposited Ge would be p-type due to the Ga and the thickness of the p-region could be controlled through the temperature and melt quantity. Following this step, the temperature gradient between the GaAs source and the Ge seed would result in deposition of t...