Browse Prior Art Database

Thin Film Tunnel Devices

IP.com Disclosure Number: IPCOM000096316D
Original Publication Date: 1963-Mar-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 27K

Publishing Venue

IBM

Related People

Magill, PJ: AUTHOR [+2]

Abstract

The structure utilizes a tunneling phenomena which, by changing the number of carriers available for conduction, realizes non-symmetrical, diode characteristics. A tunnel diode thus formed has a metal as one electrode, an oxide layer and a semiconductor as the other electrode, as shown in A. The semiconductor can be degenerate.

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Thin Film Tunnel Devices

The structure utilizes a tunneling phenomena which, by changing the number of carriers available for conduction, realizes non-symmetrical, diode characteristics. A tunnel diode thus formed has a metal as one electrode, an oxide layer and a semiconductor as the other electrode, as shown in A. The semiconductor can be degenerate.

The tunnel effect is incorporated with a p-n junction as shown in B to provide a three-terminal device.

In order to make contacts, cylindrical or stepped devices are formed as shown in C and D.

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