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Improvements in the Fabrication of TiO(2) Diodes

IP.com Disclosure Number: IPCOM000096328D
Original Publication Date: 1963-Apr-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Magill, PJ: AUTHOR [+2]

Abstract

The characteristics of TiO(2) diodes can be enhanced by the introduction of an insulating layer between the counter electrode and the TiO(x) layer. See the article commencing on Page 4 of this issue. The diode comprises a substrate upon which strips of titanium are deposited either by vacuum deposition or by sputtering. The titanium is oxidized by the steam oxidation process as described in the article referred to. Next, the substrate is placed within a sputtering chamber and supported on its anode, the cathode consisting of nickel. The sputtering is performed in a partial pressure of argon and oxygen gases to produce an insulating layer of NiO.

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Improvements in the Fabrication of TiO(2) Diodes

The characteristics of TiO(2) diodes can be enhanced by the introduction of an insulating layer between the counter electrode and the TiO(x) layer. See the article commencing on Page 4 of this issue. The diode comprises a substrate upon which strips of titanium are deposited either by vacuum deposition or by sputtering.

The titanium is oxidized by the steam oxidation process as described in the article referred to. Next, the substrate is placed within a sputtering chamber and supported on its anode, the cathode consisting of nickel. The sputtering is performed in a partial pressure of argon and oxygen gases to produce an insulating layer of NiO. After an insulating layer of sufficient thickness is deposited, the next step is carried out in an atmosphere of pure argon to deposit, by sputtering, an overlying counter electrode of pure nickel. Other counter electrode materials, e.g., gold, can be used.

Diode characteristics observed on an oscilloscope show that the reverse bias range is extended beyond that obtained from diodes using the gold counter electrode without any adverse effects on the forward characteristic.

Similarly, other oxides can be employed, f r example, TiO(2) of near stoichiometric form.

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