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Epitaxial Crystal Growth

IP.com Disclosure Number: IPCOM000096389D
Original Publication Date: 1963-May-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 34K

Publishing Venue

IBM

Related People

Boss, DW: AUTHOR [+3]

Abstract

Silicon films can be grown epitaxially on substrate wafers 10 in a closed reaction chamber 11. The silicon sources are in the form of individual silicon wafers 12 that rest on a pedestal 13 such as one made of silicon. Wafers 10 are separated from wafers 12 by individual spacers such as ring-type spacers 14 which can be made of silicon or quartz.

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Epitaxial Crystal Growth

Silicon films can be grown epitaxially on substrate wafers 10 in a closed reaction chamber 11. The silicon sources are in the form of individual silicon wafers 12 that rest on a pedestal 13 such as one made of silicon. Wafers 10 are separated from wafers 12 by individual spacers such as ring-type spacers 14 which can be made of silicon or quartz.

Radio-frequency heating of the reaction chamber is effected by winding 15. The chamber is valved as indicated. It is initially evacuated and then is filled with a mixture of hydrogen and hydrogen halide such as hydrogen chloride. Wafers 10 are maintained at a lower temperature than wafers 12.

The exact chemical reaction in the chamber 11 is not known. However, the following reaction may cause the etching-deposition procedure in 11. (SiCl(2) a Si + b HCl = c (SiHCl + d H(2) (SiCl(4) where a, b, c and d are constants.

When ring-type spacers 14 are employed, the amount of residual impurities from the reaction chamber which otherwise might undesirably enter the growing film appear to be extremely limited. The doping level in the grown epitaxial film is controlled by the impurity concentration in silicon source wafers 12, in spacers 14, and in the distance between the substrate and source wafers 10 and 12. respectively.

Dangerous silicon compounds are not required in this epitaxial deposition system. Also, the closed system is much less susceptible to the danger of an explosion than that which can be...