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Tunnel Diode Fabrication

IP.com Disclosure Number: IPCOM000096422D
Original Publication Date: 1963-May-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Gow, J: AUTHOR [+2]

Abstract

This tunnel diode is fabricated from an N-type wafer 10 which is not doped to degeneracy. This is accomplished by alloying an arsenic-lead pellet 11 with the wafer at a temperature of about 800 degrees C. Such forms a degeneratively doped molten region 12 having a concentration of about 5 x 10/19/ atoms/cu. cm. The structure is quenched to about 600 degrees C so as to out-diffuse arsenic from the dot and the molten semiconductor region 12. After cooling, gallium is added to pellet 1 1 and realloying at a temperature of 600-750 degrees C takes place to form a recrystallized P-type region 13 having an impurity concentration of about 1 x 10/20/ atoms/cu. cm. and a tunneling junction 14.

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Tunnel Diode Fabrication

This tunnel diode is fabricated from an N-type wafer 10 which is not doped to degeneracy. This is accomplished by alloying an arsenic-lead pellet 11 with the wafer at a temperature of about 800 degrees C. Such forms a degeneratively doped molten region 12 having a concentration of about 5 x 10/19/ atoms/cu. cm. The structure is quenched to about 600 degrees C so as to out-diffuse arsenic from the dot and the molten semiconductor region 12. After cooling, gallium is added to pellet 1 1 and realloying at a temperature of 600-750 degrees C takes place to form a recrystallized P-type region 13 having an impurity concentration of about 1 x 10/20/ atoms/cu. cm. and a tunneling junction 14.

This technique permits the device to be made to the highest doping levels from a starting wafer, the doping level of which is non-critical. The tunneling junction is formed in recrystallized material.

The same procedure can be employed in connection with a P-type starting wafer and the use of appropriate doping materials.

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