Browse Prior Art Database

Film Resistors

IP.com Disclosure Number: IPCOM000096435D
Original Publication Date: 1963-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Berggren, JL: AUTHOR [+2]

Abstract

This method produces deposited resistors directly on a conductive substrate. As shown in A, a nonconductive material 5, such as glass is initially silk screened onto base conductor 6 at points where resistors are desired. An alternative to the deposition of glass material 5 is to oxidize portions of base conductor 6 so as to provide the required subsequent protection against the etching solution. Base 6 can be a thin soft nickel sheet or some other conductive material. The glass is fired and then resistive material 7 is deposited over the glass so that it makes intimate contact with the base 6 at points 9.

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Film Resistors

This method produces deposited resistors directly on a conductive substrate. As shown in A, a nonconductive material 5, such as glass is initially silk screened onto base conductor 6 at points where resistors are desired. An alternative to the deposition of glass material 5 is to oxidize portions of base conductor 6 so as to provide the required subsequent protection against the etching solution. Base 6 can be a thin soft nickel sheet or some other conductive material. The glass is fired and then resistive material 7 is deposited over the glass so that it makes intimate contact with the base 6 at points 9.

Subsequently, material 10 resistant to etching solutions, such as epoxy glass, is deposited over the entire top surface of resistor 7 and base 6. A selective resist pattern 11 is then deposited on the reverse side of base 6 so that it leaves exposed only the portion of base 6 directly beneath glass portion 5. The exposed base metal is then etched away as shown in B. The same etching step can be used to eliminate portions of base 6 which are unnecessary for the required circuit configuration as shown in C.

Resistive elements such as silicon in B can be incorporated in multilayer circuit configurations. This is effected by washing away the resist and isolating the various layers with epoxy glass sheets 14 and providing through-hole connectors 13 between various levels.

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