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Browse Prior Art Database

Cryogenic Read Only Memory

IP.com Disclosure Number: IPCOM000096454D
Original Publication Date: 1963-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 36K

Publishing Venue

IBM

Related People

Kington, BW: AUTHOR

Abstract

Word-organized, cryogenic read-only memories in which information is stored by particular patterns 1 of superconductive material and by hole configurations 3 cut into a superconductive sheet 5 are shown in A and B, respectively.

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Cryogenic Read Only Memory

Word-organized, cryogenic read-only memories in which information is stored by particular patterns 1 of superconductive material and by hole configurations 3 cut into a superconductive sheet 5 are shown in A and B, respectively.

Each pattern 1 and hole configuration 3 is arranged in close proximity to a particular crossover point defined in an orthogonal array of word drive lines 7 and bit sense lines 9. The arrangement of a pattern 1 and a hole configuration 3 with respect to a bit sense line determines the binary information, i. e., 1 or 0, stored at the corresponding bit position, as indicated. The patterns 1 and hole configurations 3, respectively, are deposited onto a same or separate substrate, not shown, as word drive lines 7 and bit sense lines 9 to effect permanent or semipermanent storage of information.

As superconductive materials exhibit diamagnetic properties, magnetic fields generated by a selected word drive line 7 during a read operation are focused. This is so as to couple each of the bit sense lines 9 in a first or a second direction as determined by the relative positioning of the corresponding pattern 1 and hole configuration 3. Binary information is represented by sense signals of opposite polarity induced along bit sense lines 9. Currents supplied along selected word drive line 7 should be less than that necessary to drive portions of patterns 1 and sheet 5 adjacent a crossover point resistive or cause them to sto...