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Voltage Enhancing Sense Termination

IP.com Disclosure Number: IPCOM000096471D
Original Publication Date: 1963-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Kwei, TC: AUTHOR

Abstract

Terminating a memory sense line in greater than the characteristic impedance at the sensing end provides a voltage doubling effect. This occurs during the instant in which the incident and reflected signals coincide.

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Voltage Enhancing Sense Termination

Terminating a memory sense line in greater than the characteristic impedance at the sensing end provides a voltage doubling effect. This occurs during the instant in which the incident and reflected signals coincide.

The drawing shows a memory sense circuit with voltage enhancement. Sense conductor 1 traverses a group of storage elements 2 which can be of the superconductive type. The left end of conductor 1 is terminated in resistance 3, the characteristic impedance Zo. This termination prevents signal reflections from occurring at the left end. The right end of conductor 1 is terminated in resistance
4. This impedance is much greater than the characteristic impedance. Sense amplifier 5 effects sensing by amplifying the voltage across resistance 4.

In operation, suitable excitation of a selected drive conductor causes the associated memory bit storage element to express its value by providing an electrical signal on the sense conductor. This signal divides into two equal and opposite half waves. These travel at electrical conduction speed toward the terminations. A half wave traveling to the left terminates without reflection in the characteristic impedance. A half wave traveling to the right is reflected positively because of the large impedance mismatch provided by resistance 4. During a short period of time that the incident wave continues, the voltage of the reflected wave enhances the voltage of the incident wave. The for...