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Cathode Sputtering of Magnetic Films

IP.com Disclosure Number: IPCOM000096484D
Original Publication Date: 1963-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Flur, BL: AUTHOR [+2]

Abstract

Uniaxial thin films suitable for memory application are made by cathode sputtering in the presence of an orienting magnetic field. Since the cathode itself is ferromagnetic, the unidirectional field in the vicinity of the substrate is badly distorted and results in high dispersion and skew in the deposited film. This effect is overcome by using vacuum melted permalloy sheet rolled to less than 30 mils in thickness as the cathode.

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Cathode Sputtering of Magnetic Films

Uniaxial thin films suitable for memory application are made by cathode sputtering in the presence of an orienting magnetic field. Since the cathode itself is ferromagnetic, the unidirectional field in the vicinity of the substrate is badly distorted and results in high dispersion and skew in the deposited film. This effect is overcome by using vacuum melted permalloy sheet rolled to less than 30 mils in thickness as the cathode.

The assembly for cathode 10 includes large heat sink 2 onto which rolled permalloy 4 sheet is bonded. The heat sink is a solid block of Oxygen Free High Conductivity copper. The copper heat sink is surrounded by cathode shield 6 which is maintained at ground potential. Cooling coils 8 are provided about shield 6 for cooling.

Positioned approximately an inch away from the cathode assembly is anode assembly 12. This is a water cooled OFHC copper block on which substrate 14 receiving the deposit is placed. Inlet and outlet 16 and 18 are provided on assembly 12 for transmission of the water through it.

In the presence of an external magnetic field and with proper electrical biasing of the cathode, material is deposited on the anode substrate with the desired wall coercive and anisotropy field coercive forces, skew, and dispersion.

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