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Modulation of Recombination Radiation

IP.com Disclosure Number: IPCOM000096508D
Original Publication Date: 1963-Jun-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 12K

Publishing Venue

IBM

Related People

Kessler, HK: AUTHOR [+2]

Abstract

Intensity modulation of radiation generated within a semiconductor by radiative electron-hole recombination is accomplished through control of the recombination velocity at the semiconductor surface. When excess carriers are injected into or generated within a semiconductor structure, e. g., a Ga As diode, radiative recombination of excess electron-hole pairs occurs within the inner bulk of the structure. some of the excess carriers recombine at the surface of the structure where radiative recombination does not occur. Because surface recombination reduces the number of excess carriers which diffuse to the bulk of the structure, the probability of occurrence of radiative recombination, hence the total radiation emitted from the structure, is inversely related to the surface recombination velocity.

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Modulation of Recombination Radiation

Intensity modulation of radiation generated within a semiconductor by radiative electron-hole recombination is accomplished through control of the recombination velocity at the semiconductor surface. When excess carriers are injected into or generated within a semiconductor structure, e. g., a Ga As diode, radiative recombination of excess electron-hole pairs occurs within the inner bulk of the structure. some of the excess carriers recombine at the surface of the structure where radiative recombination does not occur. Because surface recombination reduces the number of excess carriers which diffuse to the bulk of the structure, the probability of occurrence of radiative recombination, hence the total radiation emitted from the structure, is inversely related to the surface recombination velocity.

Modulation of recombination velocity at the surface of the semiconductor leads to a corresponding modulation of the emitted radiation. The surface recombination velocity varies in accordance with variations in the magnitude of an electric field applied transversely to the surface of the semiconductor. Hence, by arranging a transparent electrode proximate to a substantial amount of the surface area of the semiconductor structure and by modulating the intensity of the field associated with the electrode, the rate of radiative recombination occurring in the bulk of the structure is correspondingly modulated.

This principle of operation...