Browse Prior Art Database

Selective Anodization

IP.com Disclosure Number: IPCOM000096520D
Original Publication Date: 1963-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 31K

Publishing Venue

IBM

Related People

Maissel, LI: AUTHOR

Abstract

Selective anodization is realized by an electrode system constructed to suppress growth of the oxide in certain areas. This method is used to produce thin film elements, e.g., resistors and capacitors.

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Selective Anodization

Selective anodization is realized by an electrode system constructed to suppress growth of the oxide in certain areas. This method is used to produce thin film elements, e.g., resistors and capacitors.

Metal article 3 comprising thin film element 4 deposited on glass substrate 5 and shaped electrode system 6 are positioned adjacent to one another. They are covered by electrolyte 2 within electrolyte cell 1. System 6 comprises insulating member 7 having openings 8. Conductive layer 9 is applied to one side of 7. A base 10 of conductive material covers the other side of 7. Electrolyte 2 is a non-aqueous solution of anhydrous salts.

Base 10 is the cathode of the cell by connecting it to the negative side of power supply 11. Metal article 3 to be anodized is made the anode of the cell by connecting it to the positive terminal of power supply 11.

Conductive layer 9 is maintained at the positive potential of the anode. In the areas where layer 9 is adjacent to article 3, the growth of the oxide is completely suppressed. This is due to the discharge of all hydroxyl ions in its immediate vicinity. In the areas of article 3 opposite to the depressions of the shaped electrode, hydroxyl ions are discharged at the surface of 3 and anodization is effected.

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