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Smooth Evaporated Strip Lines

IP.com Disclosure Number: IPCOM000096523D
Original Publication Date: 1963-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 1 page(s) / 11K

Publishing Venue

IBM

Related People

Yelon, A: AUTHOR [+2]

Abstract

If copper is evaporated on a substrate of silicon monoxide kept at 60 degrees C., the copper peels away from the SiO. If copper is evaporated on silicon monoxide substrates maintained at at high temperatures (180 degrees - 200 degrees C.), large crystallites are formed, producing a rough surface instead of the smooth copper strip lines desired for electrical circuitry.

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Smooth Evaporated Strip Lines

If copper is evaporated on a substrate of silicon monoxide kept at 60 degrees C., the copper peels away from the SiO. If copper is evaporated on silicon monoxide substrates maintained at at high temperatures (180 degrees - 200 degrees C.), large crystallites are formed, producing a rough surface instead of the smooth copper strip lines desired for electrical circuitry.

In order to avoid both of these difficulties, an initial layer of copper is deposited onto a substrate of SiO initially at a high temperature f 180' degrees- 2000 degrees . The temperature of the substrate is cooled while the copper deposition continues. Final deposition takes place while the silicon monoxide is at a temperature of 60 degrees C.

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