Browse Prior Art Database

Sheet Film Sense Line

IP.com Disclosure Number: IPCOM000096539D
Original Publication Date: 1963-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Connell, RA: AUTHOR [+3]

Abstract

In this cryogenic sheet film memory, sense line 1 is positioned on the same side of sheet film 3 as are the X and Y drive lines 5 and 7.

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Sheet Film Sense Line

In this cryogenic sheet film memory, sense line 1 is positioned on the same side of sheet film 3 as are the X and Y drive lines 5 and 7.

Sheet film 3 forming the memory plane is initially deposited in vacuum onto the smooth surface of a substrate, not shown. X and Y drive lines 5 and 7 are deposited in coordinate fashion. Sense line 1 is deposited in in-line fashion and in buckout arrangement with respect to the X drive lines 5 to minimize pickup between them. For example, sense line 1 and X drive lines 5 can be deposited through a same dumbbell mask to insure accurate registration with respect to the crossover of X and Y drive lines 5 and 7. Interconnections 9 and 9' are deposited by means of auxiliary masks. Sheet film 3, X and Y drive lines 5 and 7, and sense line 1 are insulated by sheets of dielectric material, not shown.

Considering a single memory cell defined at the crossover of an X and Y drive line 5 and 7, sheet film 3 limits the magnetic fields generated by an X drive line 5 when energized to an area proportional to the thickness of the dielectric sheet between the particular drive line and sheet film 3. Although positioned on a same side of sheet film 3, mutual inductance between X drive line 5 and sense line 1 is very low, the sheet film functioning as a magnetic shield. There is no mutual coupling between sense line 1 and Y drive line 7, since they are deposited in orthogonal fashion. When sheet film 5 is punched through upon ...