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Browse Prior Art Database

Flat Film Memory

IP.com Disclosure Number: IPCOM000096560D
Original Publication Date: 1963-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 49K

Publishing Venue

IBM

Related People

Stapper, CH: AUTHOR

Abstract

This is a ferromagnetic thin film memory array which utilizes shielding conductors between lines to reduce interline interference and prevent stray fields from disturbing adjacent bit positions. In drawing A, magnetic bits 2 and 4 are deposited directly on ground plane 6. Sense line 8 and bit drive lines 10 are laid directly upon bits 2 and 4 and provide the necessary conductors for both inserting information into the bits and sensing stored information. Between sense line 8 and each of bit drive lines 10, are shorted conductors 12 (drawing B). Conductors 12 are effective to short and thus prevent the field set up by bit drive line 10 from inducing noise into sense line 8.

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Flat Film Memory

This is a ferromagnetic thin film memory array which utilizes shielding conductors between lines to reduce interline interference and prevent stray fields from disturbing adjacent bit positions. In drawing A, magnetic bits 2 and 4 are deposited directly on ground plane 6. Sense line 8 and bit drive lines 10 are laid directly upon bits 2 and 4 and provide the necessary conductors for both inserting information into the bits and sensing stored information. Between sense line 8 and each of bit drive lines 10, are shorted conductors 12 (drawing
B). Conductors 12 are effective to short and thus prevent the field set up by bit drive line 10 from inducing noise into sense line 8.

Each of bits 2 and 4 have associated word lines 14 and 16, respectively, which are placed over the respective drive, sense and shield lines above mentioned. Between adjacent word lines 14 and 16, a further shield line 18 is placed (drawing C). Shield line 18 effectively shorts to ground the electric field set up when either word drive line 14 or 16 is energized and prevents the field from influencing the opposite bit. For instance, if word line 16 is energized, shorted conductor 18 prevents the flux set up by this energization from influencing the information held in bit 2. Likewise, when word line 14 is energized, the flux which is created by the energization influences only the information held in bit 2 and not the information held in bit 4.

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