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IP.com Disclosure Number: IPCOM000096561D
Original Publication Date: 1963-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 33K

Publishing Venue

IBM

Related People

Horton, JW: AUTHOR

Abstract

The multiple layer wafer structure 10, in plan view, has an intermediate layer and two outer layers defining the upper and lower surfaces. The intermediate layer is joined to both outer layers throughout substantially the entire area of 10. The materials of the layers are selected to form an asymmetrically conductive semiconductor junction at each of the layer joints, the junctions having oppositely poled asymmetry. At least one of the junctions has conductive properties responsive to radiation received through the associated outer layer. Both outer layers have electrical contacts 12 and 14 on the upper layer and at 16 and 18 on the lower layer. Across these DC bias voltages are applied from the voltage sources 20 and 22.

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The multiple layer wafer structure 10, in plan view, has an intermediate layer and two outer layers defining the upper and lower surfaces. The intermediate layer is joined to both outer layers throughout substantially the entire area of 10. The materials of the layers are selected to form an asymmetrically conductive semiconductor junction at each of the layer joints, the junctions having oppositely poled asymmetry. At least one of the junctions has conductive properties responsive to radiation received through the associated outer layer. Both outer layers have electrical contacts 12 and 14 on the upper layer and at 16 and 18 on the lower layer. Across these DC bias voltages are applied from the voltage sources 20 and 22.

The resultant current in the upper layer is uniformly distributed across the area because of the width of the contacts 12 and 14. Similarly, the current in the bottom layer is uniformly distributed because of the width of contacts 16 and 18. A source 24 of sweep voltage is connected to the bottom layer through the contacts 16 and 18. This results in a diagonal sweeping of the area of structure 10 in sequence as indicated by the successive lines 28, 30 and 32. This sweeping causes changes in the current between the outer layers dependent upon the condition of illumination of the upper layer. Functions of such current are detected by circuitry such as the filter 36 and the oscilloscope 38. The scanning angle of the scanning lines...