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Heterocrystal Pumped Lasers

IP.com Disclosure Number: IPCOM000096566D
Original Publication Date: 1963-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 26K

Publishing Venue

IBM

Related People

Marinace, JC: AUTHOR

Abstract

On a laser material, such as a GaAs single crystal, another material of greater band gap, e. g., GaAs:P is epitaxially grown. A light-emitting junction in this second material can then send light into the GaAs. Because the band-gap of the GaAs:P is somewhat greater than that of the GaAs, its light is readily absorbed in the GaAs and pumps electrons up to the conduction band. Reflection losses at the GaAs:P-GaAs interface are extremely low. Moreover, this is a compact system compared to systems in which the diodes and the laser rod are separate.

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Heterocrystal Pumped Lasers

On a laser material, such as a GaAs single crystal, another material of greater band gap, e. g., GaAs:P is epitaxially grown. A light-emitting junction in this second material can then send light into the GaAs. Because the band-gap of the GaAs:P is somewhat greater than that of the GaAs, its light is readily absorbed in the GaAs and pumps electrons up to the conduction band. Reflection losses at the GaAs:P-GaAs interface are extremely low. Moreover, this is a compact system compared to systems in which the diodes and the laser rod are separate.

Several variations are possible. Two or more pumping regions can be epitaxially grown on the laser material. For example, GaAs:P can be grown on one side and GaP grown on the other side. Also, the GaAs member itself can have a light-emitting junction in it. If one or both of the pumping regions has the GaAs in a nearly lasing state, then the junction in the GaAs can put it over the threshold and lasing occurs. One of the side regions can be used to quench lasing, if the other side and the GaAs junction are used to cause lasing.

The structure is shown in the drawing.

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