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Vapor Grown III V Compound Inlays

IP.com Disclosure Number: IPCOM000096569D
Original Publication Date: 1963-Jul-01
Included in the Prior Art Database: 2005-Mar-07
Document File: 2 page(s) / 28K

Publishing Venue

IBM

Related People

Canavello, B: AUTHOR [+3]

Abstract

Although growth does not occur on (111) B faces when low concentrations of I(2) are used (and polycrystalline growth when higher concentrations of I(2) are used), when pyramidal pits are made into a GaAs substrate of this orientation, the pits are filled with an epitaxial deposit of GaAs. No further growth occurs after the growth in the pits is flush with the original (111) face. Thus, lapping off extraneous growth is not necessary to produce a substrate with vapor-grown inlays.

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Vapor Grown III V Compound Inlays

Although growth does not occur on (111) B faces when low concentrations of I(2) are used (and polycrystalline growth when higher concentrations of I(2) are used), when pyramidal pits are made into a GaAs substrate of this orientation, the pits are filled with an epitaxial deposit of GaAs. No further growth occurs after the growth in the pits is flush with the original (111) face. Thus, lapping off extraneous growth is not necessary to produce a substrate with vapor-grown inlays.

An alternative scheme is shown in the drawings. Pyramids are shaped from the substrate material. The pyramids are of the same height and the axes of the pyramids are in the forbidden growth direction (111) B. Growth occurs between the pyramids and, when it reaches the apices, growth stops. Thus, very small areas of the pyramid apices are exposed. This facilitates fabrication of diode junctions of very small areas.

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